הלקוח שלנו:
The company is a leading developer of next-generation semiconductor memory technologies.
אחריות:
- Lead development of novel NVM (ReRAM) memory modules in advanced nodes;
- Oversee memory design from architecture to layout, verification, and characterization;
- Align memory specs with system needs via customer and marketing collaboration;
- Optimize timing, power, and apply DFT strategies;
- Implement best practices for low-power, low-voltage, and low-leakage design.
ניסיון ומיומנויות נדרשים:
- 10+ years of hands-on experience in volatile or non-volatile memory design;
- Deep knowledge of memory architecture, analog circuit design, power/timing trade-offs, and semiconductor physics;
- Experience in memory timing and power characterization;
- Strong expertise in advanced CMOS processes (FDSOI, FinFET);
- Proficiency in low-power and high-reliability design practices;
- Skilled in Cadence Virtuoso, SPICE, Fast-SPICE and mixed-signal simulators;
- Familiarity with parasitic extraction, high-sigma analysis, and memory characterization flows.
- English – Upper-Intermediate.
יהיה יתרון:
- Experience with memory compiler development.
תנאי עבודה
שבוע עבודה של 5 ימים, יום עבודה של 8 שעות, לוח זמנים גמיש;
כל החגים הציבוריים של UA הם ימי חופש;
חופשה וחופשת מחלה מכוסות על ידי החברה;
עבודה מרחוק.